Temperature- and diameter-dependent electrical conductivity of nitrogen doped ZnO nanowires

Abstract

A modified formula to calculate the axial conductivity of nanowires was proposed based on the one-dimensional quantum state density distribution and Boltzmann transport theory. Numerical simulations of the ZnO nanowires (ZnONWs) and Nitrogen-doped ZnO nanowires (N-ZnONWs) were implemented using data from the first principles calculation. The results indicate that ZnONWs are low-conductivity wide band-gap semiconductors owing to their low carrier concentrations at room temperature, with N-doping increasing the conductivity. The N-ZnONWs carrier concentrations increased with increasing temperature, and possessed significantly higher carrier concentrations than ZnONWs. With an increase in diameter, the ZnONWs conductivities increased, whereas the N-ZnONWs conductivities decreased.