Temperature and DC Bias Dependences of Dielectric Behavior of Different Oriented 0.23PIN-0.52PMN-0.25PT Single Crystals

Abstract

The dielectric behavior under temperature (− 100°C to 250°C) and DC bias (0–4.0 kV cm−1) of [011]- and [001]-oriented PIN-PMN-0.25PT single crystals are systematically investigated. The micro–macro domain transition at Tf is found for [011]- and [001]-oriented samples under DC bias. The dielectric peak induced by DC bias field is found at about 110°C (named peak II), which is nearly independent of DC bias. The appearance of these dielectric peaks may be caused by “2R” and “4R” multidomain states in [011]- and [001]-oriented crystals. With increasing DC bias, the phase transition temperature of R-to-C increases, and the corresponding dielectric permittivity peak value decreases and the dielectric peak becomes wider. The frequency dispersion of the dielectric peak is strongly affected by DC bias. The dielectric behaviors of [011]- and [001]-oriented crystals induced by temperature and DC bias are also compared with that of a [111]-oriented sample.