Temperature- and current-dependent spontaneous emission study on 2 µm InGaSb/AlGaAsSb quantum well lasers

Abstract

Spontaneous emission measurements, as a function of injection current and temperature, were carried out from the sidewall of a working 2 µm InGaSb/AlGaAsSb quantum well laser. The local Z power parameter was extracted to investigate the carrier recombination behaviors. A model involving the activation energy is presented to interpret the carrier loss mechanisms. Our findings show that the majority of the injected carriers recombine radiatively at low injection currents, and that Auger nonradiative recombination increases significantly with injection current. More importantly, no obvious temperature dependence of Z is observed from 20 to 80 °C.