Abstract
Electrical conductivity of Ge10Se90-xBix(x=0,2,4,6,8,10) glassy systems prepared by melt quenching technique has been studied at different temperature in bulk form through I-V characteristic curves. It has been observed that the electrical conductivity increases as the Bi concentration increases up to 4 atomic weight percentages and on further addition of Bi it reduces. The variation in electrical conductivity with Bi concentration is attributed to the Se-Bi bond concentration. Using the Arrhenius equation of conductivity, the activation energy of conduction is evaluated. The effect of Bi concentration on activation energy has also been studied. It is quite evident from results that Poole-Frankel and Rechardson-Schottky conduction mechanism hold good for conduction in these glasses.
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