Abstract
We demonstrate that photocurrent spectroscopy can be used to study optical absorption in the active layer of InGaN-based light-emitting diodes. The temperature dependence of the photocurrent spectrum was compared with that of the photoluminescence, clearly showing the effect of carrier localizations at low temperatures below 70 K. The photocurrent spectrum investigated by applying reverse biases revealed that type-II optical transitions between the InGaN quantum well and the GaN barrier were considerable at high reverse voltages.
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