Tem Study of Stacking Faults Formed in Pairs in a ZnSe Epitaxial Layer on a GaAs(00l) Buffer Layer

Abstract

ABSTRACTStructure of stacking faults in a ZnSe epitaxial layer grown on a GaAs(001) buffer layer was determined with transmission electron microscopy. Two stacking faults were formed in pairs on (111) and (111) planes with the same polarity and met at a point which is a few atomic layers away from the interface between ZnSe and GaAs. Partial dislocations were found to be the Shockley type ones with a Burgers vector of 1/6<211>. Atomic force microscopy showed that hillocks were formed in pairs at a surface where the pair of stacking faults existed in the layer. Moreover, it was observed that the pair of stacking faults elongated along the <110> direction by gliding on the {111} faulted planes under annealing at 200°C for 30min. Formation mechanisms of the pair of stacking faults have been discussed.