Abstract
Dark spot defects in (GaAl)As-GaAs double heterostructure lasers are studied by transmission electron microscopy and found to be a cluster of dislocations generated in the first (GaAl)As epitaxial layer during epitaxial growth. Burgers vectors and spatial configuration of dislocation dipoles developing from these dislocations are determined. It is found that Burgers vectors of dislocations in the dislocation cluster obey the Burgers vector sum rule.
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