Abstract

Over the last two decades extensive studies on the optical and electrical properties of hydrogenated amorphous Si (a-Si:H) have been reported. However, less attention was given to the structural characterization of this material partly due to the insensitivity to hydrogen of structural probes such as x-rays and electron diffraction. From a recent set of experiments, results on the solubility limit of hydrogen in a special type of a-Si:H and the characterization of hydrogen induced complexes or nanobubbles has been reported. In this study, we report TEM observations of the structural morphology ofhydrogen related defects that support these recent measurements obtained by secondary ion mass spectrometry (SIMS) and small-angle x-ray scattering (SAXS).a-Si:H thin films for solar cells and other applications are produced by a variety of methods. In each case, the deposited films are usually not homogeneous as they have been found to contain low density inhomogenities in the size range of 1-10 nm. These defects are commonly referred to as microvoids or hydrogen-rich clusters.

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