Abstract
Al x Ga 1− x As/GaAs quantum-well structures, grown by organometallic vapor phase epitaxy have been studied in cross-section using transmission electron microscopy. Compositional variations in the Al x Ga 1− x As and the chemical abruptness of the heterojunction have been examined using structure factor contrast in dark-field images. The composition modulations are due to instabilities during the growth process rather than an intrinsic property of the ternay alloy Al x Ga 1− x As.
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