Abstract
Heteroepitaxial GaN layers grown on sapphire by metal organic vapour phase epitaxy (MOVPE) have been characterised by conventional transmission electron microscopy (TEM) on planar and cross-sectional samples, Large Angle Convergent Beam Electron Diffraction (LACBED) and by high-resolution transmission electron microscopy (HRTEM). Hollow tubes termed nanopipes were resolved on planar view and cross-sections of heteroepitaxial GaN. For advanced studies of the nature of nanopipes the LACBED method was employed. The recognition between perfect structure and screw distortion around nanopipes was performed with high accuracy using Zone Axis LACBED images.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
