Abstract
In the present work Conventional and High Resolution Transmission Electron Microscopy has been used to examine the structure and types of interfaces between 3C-SiC and 6H-SiC for samples grown by Sublimation Epitaxy. The layers were grown on on-axis 6H-SiC substrates at different temperature gradients. The changed growth conditions influence on the nucleation of 3C-SiC on the 6H-SiC substrates and their competition with nucleation of 6H-SiC islands. Three specific types of 3C/6H-SiC interfaces were observed and the implications of these observations are discussed.
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