Abstract
In situ heating experiments in the transmission electron microscope offer unique opportunities to visualize and understand material behavior. The annealing behavior of silicon amorphized by conventional dopant implants as studied by in situ TEM has been reported in the literature. As part of a study on the behavior of fluorine in silicon, we have performed in situ anneals of fluorine-implanted amorphized silicon on XTEM samples, and compared these with bulk furnace-annealed samples.The wafer was an n-type (100) silicon (18-24 ohm-cm) implanted with 1 x 1016 /cm2 fluorine at 60 keV at room temperature through a 13 nm oxide layer. The XTEM samples were heated within the TEM in a Gatan sample holder in a JEOL 2000 FXII STEM operated at 200 kV. The behavior of the sample was observed using a wide angle CCD TV camera and recorded on videotape. Micrographs were recorded before the anneal and after the temperature had stabilized.
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