Abstract
Basic work is being performed on the damage structures resulting from ion implantation of (111) Si slices. Specimens were implanted at room temperature with either 60keV Ne+ in the dose range 1 x 1014 to 5 x l015 cm-2, or 150keV As+ in the range 3 x 1014 to 7.5 x 1015 cm-2, and subsequently annealed in an inert atmosphere at temperatures up to 1000°C. These were thinned for 100kV TEM examination to give both ‘plan’ and ‘90° cross-section' specimens. Results are described for four different aspects of the work.First, Fig.l shows the damage for different Ne+ doses (800°C anneal). For 2.5 x 1014( cm-2, the damage consists of a band of loops and rods, with a defect-free zone close to the surface. For 1 x 1015 cm -2, there are two separate damage layers. The upper layer comprises mainly micro-twin lamellae, and the lower layer loops and rods similar to those in Fig.la.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Proceedings, annual meeting, Electron Microscopy Society of America
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
