Abstract
Epitaxially-grown self-assembled indium nanostructures, or islands, show promise as nanoantennas. The elemental composition and internal structure of indium islands grown on gallium arsenide are explored using Transmission Electron Microscopy (TEM) Energy Dispersive Spectroscopy (EDS). Several sizes of islands are examined, with larger islands exhibiting high (>94%) average indium purity and smaller islands containing inhomogeneous gallium and arsenic contamination. These results enable more accurate predictions of indium nanoantenna behavior as a function of growth parameters.
Highlights
As the field of plasmonic nanostructures develops, there is increasing demand for epitaxiallygrown metallic nanostructures
The indium islands analyzed in this work were grown via Molecular Beam Epitaxy (MBE), using the equipment and procedures described in Ref. 17
To prepare the Transmission Electron Microscopy (TEM) cross-sections, the regions to be analyzed were covered in a protective coating composed of 10nm of electron beam-deposited carbon, followed by 500nm of electron beamdeposited platinum, and 2um of ion beam platinum, with the electron beam-deposited layers serving to protect the surface of the sample from damage during the deposition of the ion beam platinum layer
Summary
As the field of plasmonic nanostructures develops, there is increasing demand for epitaxiallygrown metallic nanostructures. Epitaxially-grown nanostructures may have applications in quantum computing.[11,12] Majorana fermions, a candidate for qubit construction, have been observed in InSb nanowires coupled to superconducting NbTiN.[13] Other s-wave superconductor-1D semiconductor systems are expected to generate Majorana fermions; InAs and indium have been identified as a potential semiconductor and superconductor, respectively.[14,15] InAs nanowires can be grown epitaxially, suggesting that self-assembled indium islands may allow for the epitaxial growth of entire Majorana fermion-generating heterostructures. Prior work has indicated that these structures may contain impurities unique to the epitaxial growth process.[17] This paper seeks to describe and analyze the internal structure of indium islands grown under three different sets of growth conditions, in order to better predict the behavior and future applications of these plasmonic nanostructures
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