Abstract
Structural characterization of InGaAs/GaAs quantum wires grown by MOVPE on V-grooved substrates was performed by means of transmission electron microscopy (TEM). Both ‘bent-shaped’ and ‘V-shaped’ quantum wires were studied. For both types of nanostructure, single and multiple structures were considered, together with single V-shaped wires, with different In mole fractions, ranging between 10 and 20%. Direct visualization of the structure of these materials allowed correlation of the growth conditions with the resulting microstructure. A deeper understanding of optical properties of the materials was obtained also, by direct visualization of the confinement region and by analysis of the evolution of the planes of growth.
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