Abstract
Si films with 〈111〉 preferred orientation have been prepared on 6H–SiC (0001) C-face by low-pressure chemical vapor deposition. The high-resolution transmission electron microscopy and the selected area electron diffraction results indicate that the Si film has epitaxial connection with the 6H–SiC substrate and the parallel-plane relationship of Si/6H–SiC heterojunction is (111)Si//(0001)6H–SiC. Misfit dislocation array is clearly observed at the Si/6H–SiC interface, which accommodates the most of lattice mismatch strain and make the lattice coincident at the Si/6H–SiC interface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
