Abstract
The properties of InMnAs epitaxial layers and quantum dots prepared on (100) GaAs substrates using Metal-Organic Vapor Phase Epitaxy (MOVPE) are reported. Transmission Electron Microscopy (TEM) observation confirmed that the quantum dot structures were plastically relaxed. The degree of relaxation depends on the amount of Mn incorporated in the structure. Moiré fringes at TEM plan view images were used to evaluate strain in the InMnAs quantum dot structures. TEM observation confirmed that the InMnAs dots were uniform and they grew in the zinc-blende structure. The bright field TEM micrographs (cross-sectional) of the epitaxial layers showed the presence of InMnAs precipitates located under the interface between the InMnAs and substrate.
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