Abstract
AbstractThe microstructure and composition of InGaN islands is analysed by transmission electron microscopy. Island samples were grown by metalorganic vapour phase epitaxy and molecular beam epitaxy, exhibiting different microstructures. Differences of the In concentration in the islands are discussed with respect to the observed relaxation of the islands. Furthermore the capping of molecular beam epitaxially grown island samples with GaN is investigated, showing a pronounced dissolution already at a nominal cap layer thickness of 2 nm. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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