Abstract
The production of Te and Se thin films by evaporation carried out under pressures of argon gas ranging from 1 atm to 0.1 Torr have been studied and the selective absorption characteristics of the resultant Te and Se films determined. Absorptivities (a) in excess of 97% have been observed in Te films deposited in 1 Torr of argon. Absorptivities of gas evaporated Se films did not rise above 60%. Emissivities (e) of Se films were also high, over 20%. Emissivities of Te thin films were less than 10% in most instances. Maximum a/e values of 12:1 were obtained for Te films deposited at an argon pressure of 10 Torr.
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