Abstract
Activation processes for a two-level fluctuator (TLF) situated in the barrier of a nanometer tunnel junction and producing telegraph resistance noise are considered in the framework of the soft-potential model for the TLF. It is shown that at large enough biases these processes are dominated by TLF interaction with inelastically tunnelling electrons. The explanation of the rather complicated TLF lifetime voltage dependence, observed in recent experiments, is suggested.
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