Abstract
Abstract: All-optical signal process is taken into consideration as one of the promising answers to similarly enhance the data communication speed. Searching for a right material platform continues to be a crucial problem, which calls for numerous important residences which include excessive Kerr nonlinearity, negligible nonlinear loss, and capacity compatibility with the prevailing complementary metal-oxide semiconductor (CMOS) fabrication manner. In Recent years, many on-chip structures had been investigated, inclusive of silicon-on-insulator (SOI), Si3N4, silicon wealthy nitride (SRN), and amorphous silicon; However, those substances can hardly ever gain each excessive Kerr nonlinearity and occasional loss simultaneously. For instance, the SOI platform has the maximum mature fabrication generation and relatively excessive third-order optical nonlinearity, however its overall performance in Nonlinear photonics is usually confined via way of means of two-photon absorption (TPA) at a telecom wavelength of 1550 nm-1
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
