Abstract
Basic technology and its progress in broad-area high power laser diodes are reviewed. Brief overview of research history and overall technology have been presented. Recent progress of Al-free active region lasers and broad waveguide structure in our laboratory is described in detail. In addition to the low surface recombination velocity of Al-free materials, optimization of the waveguide thickness in broad waveguide structure has lead to reliable operation of 50-μm wide stripe lasers at 1.5 W and 70°C.
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