Abstract
—The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices.
Highlights
The disordered thin superconducting NbN film has found an application as a sensitive element in bolometric detectors of terahertz and infrared ranges, such as Hot Electron Bolometers (HEB) devices [1], singlephoton SSPD detectors [2]
We present the capabilities of our technology of NbN HEB fabricating on Si substrates that allows us to obtain detectors with very close R (T) characteristics for geometrically identical detectors within one batch
The detector consists of a superconducting NbN film embedded into Ti/Au terminals of a planar antenna deposited onto a Si substrate
Summary
The disordered thin superconducting NbN film has found an application as a sensitive element in bolometric detectors of terahertz and infrared ranges, such as HEB devices [1], singlephoton SSPD detectors [2]. Each pixel of the matrix – an HEB - is considered as a separate detector, requiring individual adjustment of the bias voltage and local oscillator (LO) power.
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