Abstract
Technological route is reported how to fabricate an InSb spin device for studying spin-transport phenomena in CPP geometry. The device, which consists of ferromagnetic CoFe layer and MgO tunnel barrier deposed on the n-InSb single-crystal substrate, was manufacturing by method of contact photolithography with lift-off technology of drawing transfer in the topological layers. The optimal methods for preparation of InSb substrate surface and photoresist exposure parameters are found by measuring the voltage between InSb and ferromagnetic probe (Hanle effect) that appears due to the spin polarization of electrons injected from ferromagnet into InSb.
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