Abstract
This paper, under the NEDO project, aims at technology development of high-quality, n-type multicrystalline Si wafers. The targets of the technology development are to realize a high minority-carrier lifetime of 1 ms and to apply for a commercial solidification furnace. In particular, real-time observation of the unidirectional solidification process, the effect of quartz crucible quality on the ingots, the quality improvement of n-type Si wafers and evolution to a commercial furnace will be described.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
