Abstract
Over the past decade, memristors have been extensively studied for a number of applications, almost exclusively with DC characterization techniques. Studies of memristors in AC circuits are sparse, with only a few examples found in the literature, and characterization methods with an AC input are also sparingly used. However, publications concerning the usage of memristors in this working regime are currently on the rise. Here we propose a "technology agnostic" methodology for memristor testing in certain frequency bands. A measurement process is initially proposed, with specific instructions on sample preparation, followed by an equipment calibration and measurement protocol. This article is structured in a way which aims to facilitate the usage of any available measurement equipment and it can be applied on any type of memristive technology. The second half of this work is centered around the representation of data received from following this process. Bode plot and Nyquist plot representations are considered and the information received from them is evaluated. Finally, examples of expected behaviors are given, characterizing simulated scenarios which represent different internal device models and different switching behaviors, such as capacitive or inductive switching. This study aims at providing a cohesive way for memristor characterization, to be used as a good starting point for frequency applications, and for understanding physical processes inside the devices, by streamlining the measuring process and providing a frame in which data representation and comparison will be facilitated.
Highlights
The alternative way of testing such a device would be to use a small Alternating Current (AC) signal superimposed on a DC bias, ensuring that the AC signal stays within a good linear approximation region and does not result in resistive switching
We believe that the discovery of a diffusion process inside a memristive device could be the missing link to understanding some of the volatile kinetics seen in volatile m emristors[4]
We present a proposed methodology for testing memristive devices. This type of measurement aims at characterizing devices using a small AC signal superimposed on a DC bias
Summary
The alternative way of testing such a device would be to use a small AC signal superimposed on a DC bias, ensuring that the AC signal stays within a good linear approximation region and does not result in resistive switching. For devices which require a forming step, it is normal for their pristine state to exhibit volatile hysteretic loops either on one or both polarities (Fig. 1a) with increasing voltages, up to reaching a breakdown voltage. These devices need an electroforming step to turn into non-volatile memristors which retain their programmed states. Most technologies have a measure of behavioural consistency between electroformed devices, and a round of destructive testing is suggested, to ascertain the typical breakdown voltage This is achieved by submitting some devices to continuously higher switching voltages, until their total breakdown. Another key piece of information during this characterization step is to determine a non-invasive testing voltage
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