Abstract
The fabrication of the Co/ZnO multilayer thin film for studying the influence of thermal annealing on optical and electrical properties is presented in this paper. In this case, at first Co/ZnO multilayer films were prepared by e-beam evaporation in a vacuum at a pressure of 3.2×10-5 torr. In the multilayer, the thickness of Co and ZnO was kept same. Each layer thickness was varied from 5 nm to 15 nm and repeated three times. The deposition rate of the Co and ZnO thin films are about 1.33 nm/s & 1.43 nm/s respectively. The optical and electrical properties of the deposited and annealed Co/ZnO films had been studied. The average transparency of Co/ZnO multilayer thin film is roughly about 55% and decreased with increasing film thickness and increased when annealed. The T. C. R. of deposited and annealed Co/ZnO multilayer thin films in all cases is negative which indicates that the thin films are semiconducting in nature.
Highlights
Dilute magnetic semiconductors (DMSs)—semiconductors doped with a few percent of magnetic atoms—have been intensely researched in the past few years due to their promising application in spintronics devices [1]
A powerful review of DMS state of the art by Pearton et al [19] summarized that ZnO: Co system has promising applications in spintronics that requires ferromagnetism near room temperature
Risbud et al [20] suggested that the wide bandgap wurtzite phase semiconductor ZnO is very suitable to be the matrix in DMS as the zinc ions can be substituted by magnetic transition metal ions to yield a metastable solid solution
Summary
Dilute magnetic semiconductors (DMSs)—semiconductors doped with a few percent of magnetic atoms—have been intensely researched in the past few years due to their promising application in spintronics devices [1]. Based on the theoretical works of Dietl et al [2], ZnO-based DMS has attracted a considerable amount of interest due to their proposed applications of room-temperature ferromagnetism. With the evolution of spintronics, transitional metal doped ZnO thin film have found potential applications in spintronics and photonics devices [3, 4]. A powerful review of DMS state of the art by Pearton et al [19] summarized that ZnO: Co system has promising applications in spintronics that requires ferromagnetism near room temperature. Risbud et al [20] suggested that the wide bandgap wurtzite phase semiconductor ZnO is very suitable to be the matrix in DMS as the zinc ions can be substituted by magnetic transition metal ions to yield a metastable solid solution. International Journal of High Energy Physics 2017; 4(3): 32-35 as a noble and widely used film fabrication technique
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