Technological process and resonator design optimization of Ir/LGS high temperature SAW devices

Abstract

Photolithography together with ion beam etching was used for fabrication of high temperature SAW devices. Ir thin film of 0.3 µm thick was deposited by magnetron sputtering without additional adhesion layers and than Ir film was annealed after electrode patterning in different conditions. The resistivity of magnetron sputtered thick Ir films drops noticeably after annealing. However, this process requires special care in order to avoid delaminating of the film due to developing high stress during such procedures. We have annealed the substrates with Ir films in different regimes and in different gas/vacuum conditions. The results of these studies have shown that annealing in air up to about 500 °C decreases the Ir film resistivity 1.5–2 times. Vacuum annealing did not show much improvement in comparison to open air annealing. Magnetron sputtered thin Ir films have somewhat porous structure allowing oxygen to diffuse from the substrate surface through Ir films. Resonator structures with thick Ir electrodes were prepared and tested. Examples of the resonator structures show very promising properties, such as high conductance and high Q-factor.