Abstract

AbstractIn this paper we introduce three technological ways how to increase an absorption coefficient of hydrogenated silicon/Si:H/ thin films and diode structures on the base of Si:H. The first one is reactive deposition epitaxy (RDE), which permit to form silicide nanoparticles of different elements /Fe, Cr, Ca, Mg/ with semiconducting properties and convenient band gap. Two more simple techniques have been also tested for the creation of magnesium silicide nanoparticles (Mg2Si‐NPs): a reactive laser ablation (RLA) and the combination of Mg vacuum evaporation and Plasma‐Enhanced Chemical Vapour Deposition (PECVD). The formation of Mg2Si‐NPs, its structures and the changes of optical absorption for samples grown by three methods have been proved by the Raman and optical spectroscopies. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.