Abstract
The behavior of the lifetime of nonequilibrium charge carriers τp, the reverse current I R, and the forward-voltage drop U F in electron-irradiated (E irr = 6 MeV) commercial p +-n-n + diodes at irradiation temperatures in the range of T irr = 20–400°C is studied. Studies have been performed for samples fabricated on a single-crystal Si substrate either doped with phosphorus in the course of growth by the Czochralski method (Cz-n-Si:P) or doped with phosphorus by nuclear transmutations, neutron-transmutation doped Si (NTD n-Si:P). It is shown that, by choosing the temperature conditions of technological irradiation, one can solve the problem of attaining small values of τp at a minimal increase in U F and I R in fast-response diodes. It is established that, in the case of comparable variations in τp in the base region of diodes, the best relation between U F and I R is observed at T irr = 300°C in n-Si:P samples doped by the Czochralski method and at T irr = 350°C in samples doped by reactions induced by thermal neutrons.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
