Abstract
We have experimentally studied dependence of the optoelectronic parameters (resistance, photosensitivity, drift mobility, and optical absorption edge) of thin (As2S3)x(As2Se3)1−x glassy semiconductor films on the rate of their thermal deposition in vacuum onto a Lavsan (Dacron) roll base. Films obtained at the optimum deposition rates, ranging from 4 to 7×10−3 μm/s, are characterized by greater values of the resistance, photosensitivity, and drift mobility, while the absorption edge approaches a value typical of a bulk glassy semiconductor. The influence of pores, formed in the volume of the deposit, on the physical properties of the films is discussed.
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