Abstract
Photovoltaic properties of n-In1-xGaxN/p-Si,Ge (IGN) heterostructures have been evaluated by device simulation and are compared with the performance of c-Si homojunction solar cells. Best achievable cell performance for tandem cells under AM1.5 illumination conditions were 18% for p-Ge and up to 27% for n- InGaN/p-Si contacts, achievable under optimum cell design, material quality and operation parameters. It was shown that the quality of the deposited semiconductor films (IGN) determines the solar cell efficiency. Some critical aspects of the IGN growth, as effects of substrate temperature and V/III ratio, using MBE technique were investigated. Possible routes to overcome crucial problems in growth of high quality IGN films are discussed.
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