Abstract

This paper has developed two techniques to reduce the parasitic parameters and improve the high-frequency performance of the planar integrated electromagnetic interference (EMI) filter. First, each developed technique has been analyzed, respectively, then the performance of an EMI filter with both the developed techniques has been researched. The research contents are as follows. 1) Analyzing the improvement of the equivalent parallel capacitance (EPC) for a common mode (CM) EMI filter by two CM windings overlapped and interleaved layout. The EPC of the integrated EMI filter is about 14% of the reference EMI filter. 2) Analyzing the improvement of the equivalent series inductance (ESL) in the parallel branch for a CM EMI filter by each CM winding coupled with two ground winding layers. The resonance frequency brought by ESL is shifted to a higher frequency. At 30 MHz, the insertion loss is increased by 45 dB compared with the reference. In the mean time, the structure is equivalent to a two-stage L-type low-pass filter, which can largely increase the high-frequency attenuation compared with the one-stage L-type low-pass filter for the reference one. (3) Researching the performance of an EMI filter with both the proposed techniques. The developed EMI filter can not only decrease the EPC, but also reduce the negative effect of ESL. The developed EMI filter improves the high-frequency performance dramatically compared with the EMI filter with only one of the developed techniques. In the mean time, the differential mode (DM) capacitor is formed by the two overlapped and interleaved windings, and does not need an extra lumped DM capacitor. Therefore, CM inductors, CM capacitors, and DM capacitors can be integrated in the overlapped and interleaved L-C winding structure, so miniaturized EMI filter can be realized. The experiment results indicate effectiveness of the developed integrated EMI filters, and the cost and complexity is the same as the reference EMI filter.

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