Abstract
The authors believe that semiinsulating (Cd,Mn)Te crystals can successfully replace the commonly used (Cd,Zn)Te crystals as a material for manufacturing large-area X- and Gamma- ray detectors. Good quality, high-resistivity (109 ÷ 1010 Ω·cm) crystals of (Cd,Mn)Te:V are grown by the Bridgeman method. Doping (≈1016 cm−3) with vanadium, which acts as a compensating dopant, and special annealing in cadmium vapours, which reduces the number of cadmium vacancies existing in the crystal after the growth, ensure high resistivity of the crystals.
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