Technique for Producing Metal Oxide Thin-Film Transistors at Low Temperatures

Abstract

This research presents a novel method for manufacturing metal oxide thin-film transistors (TFTs) at low temperatures. The method involves coupling a metal-oxide film semiconductor to a thin film grid dielectric layer. By carefully controlling the combustion of a fuel-oxidant mixture, the desired metal-oxide film semiconductor is formed at temperatures below 350°C. This approach offers a cost-effective and scalable solution for producing high-performance TFTs on flexible plastic substrates.