Abstract
An analysis of data yielded by a complex statistical study of conditions of preparations and parameters of technical n-type α-SiC crystals has demonstrated that industrial Acheson furnaces enable favorable conditions to be created for the spontaneous mass growth of large amounts of perfect α-SiC seed crystals (substrates) and for their collection by a special procedure developed by the authors. It was established that such crystals, which are relatively cheap to produce, meet all technical requirements for substrate materials. It is now proposed to obtain a similar classification, using the collection procedure developed, of technical p-type α-SiC crystals produced in Acheson furnaces or containers.
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