Abstract
This paper reports the research results of high power silicon carbide Schottky barrier diode (SiC SBD) in three aspects, namely the quality and type selection of SiC materials, device structure of SBD and the manufacturing process of SiC devices. Besides, the key processes of manufacturing SiC SBD, i.e. p-type ion implantation and activation process, ohmic contact process, Schottky metal preparation process, and passivation layer preparation process, are analyzed in detail. The paper introduces the preparation method of SiC SBD with a withstand voltage of 1200V, a current density of more than 120A/cm2 and a junction capacitance of less than 0.4pf, proposing a new technical route and process flow for preparation of high-power SiC SBD.
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