Abstract
The pn junction characteristics of the PbTe epitaxial layers grown on PbTe substrates are investigated. Both the substrate crystals and the epitaxial layers are grown under controll Te vapor pressures. The ideality factors n of pn junctions decrease close to 1 in the temperature region from 40K to about 120K, but then increase with increasing temperature. The increase of n is more pronounced for higher Te vapor pressure. As a possible origin of the recombination current, deep levels with Ed=0.09 eV are found from Hall measurements for pn junctions grown under higher Te vapor pressure.
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