Abstract
Hybrid structures consisting of ferromagnetic Mn(Ga)As clusters, which are embedded defect-free in a p-GaAs:Mn matrix, are realized by epitaxial growth using metalorganic vapour-phase epitaxy (MOVPE). The successful Te-co-doping of the GaAs:Mn matrix leads to a change from p- to n-type carrier transport. This behaviour enables the growth of structures for studying electron spin-injection effects. First laser devices including a co-doped hybrid structure in the n-type region of the contact of the device are realized. Investigations by SQUID magnetometer show that the ferromagnetic properties of the Mn(Ga)As clusters are not influenced by the Te co-doping of the surrounding GaAs matrix.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
