Abstract
Different Transparent Conductive Oxide (TCO) layers properties are evaluated after annealing steps at temperatures above 200°C, in order to study their potential use in crystalline silicon (c-Si) solar cells fabrication processes. While the conductivity of Indium Tin Oxide (ITO) layers obtained by magnetron sputtering (MS) is almost stable after annealing in air, Aluminum doped Zinc Oxide (AZO) layers deposited by Atomic Layer Deposition (ALD) need a controlled atmosphere to maintain high carrier densities and mobilities. During the annealing processes, contaminating atoms (such as Zn) diffuse into the c-Si bulk and may potentially decrease its quality. Thus, both the contamination of the c-Si bulk and the properties of the AZO layer have been analyzed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
