T-Channel Field Effect Transistor with Three InputTerminals (Ti-TcFET).

Hao Ye,Zhufei Chu,Zeqi Chen,Jianping Hu

doi:10.3390/mi11010064

Abstract

In this paper, a novel T-channel field effect transistor with three input terminals (Ti-TcFET) is proposed. The channel of a Ti-TcFET consists of horizontal and vertical sections. The top gate is above the horizontal channel, while the front gate and back gate are on either side of the vertical channel. The T-shaped channel structure increases the coupling area between the top gate and the front and back gates, which improves the ability of the gate electrodes to control the channel. What’s more, it makes the top gate have almost the same control ability for the channel as the front gate and the back gate. This unique structure design brings a unique function in that the device is turned on only when two or three inputs are activated. Silvaco technology computer-aided design (TCAD) simulations are used to verify the current characteristics of the proposed Ti-TcFET. The current characteristics of the device are theoretically analyzed, and the results show that the theoretical analysis agrees with the TCAD simulation results. The proposed Ti-TcFET devices with three input terminals can be used to simplify the complex circuits in a compact style with reduced counts of transistors compared with the traditional complementary metal–oxide–semiconductor/ fin field-effect transistors (CMOS/FinFETs) with a single input terminal and thus provides a new idea for future circuit designs.

Highlights

Because of short-channel effects, the size of metal-oxide-semiconductor (MOS) devices is seriously restricted
fin field-effect transistor (FinFETs) has been widely used in chip fabrication since it can considerably improve the ability of the gate electrode to control the channel and suppress the short-channel effects
This paper proposes a novel T-channel field effect transistor with three input terminals (Ti-TcFET)

Summary

Introduction

Because of short-channel effects, the size of metal-oxide-semiconductor (MOS) devices is seriously restricted. In order to continue Moore’s law, many new device structures have been proposed, such as silicon-on-insulator metal-oxide-semiconductor field-effect-transistors (SOI MOSFETs) with a single-gate structure, fin field-effect transistor (FinFETs) with a double-gate structure [1], and tri-gate field effect transistors (FETs) [2], Ω-gate FETs [3], and Gate-All-Around (GAA)FETs with a multi-gate structure. Among these devices, FinFET has been widely used in chip fabrication since it can considerably improve the ability of the gate electrode to control the channel and suppress the short-channel effects. The two-input low-threshold FinFET device proposed in the literature [6,7,8,9,10] is equivalent to two parallel transistors, while the two-input high-threshold

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Conclusion