Abstract
Simulation study of gate-all-around (GAA) junctionless nanowire transistor has been performed using Sentaurus Technology Computer Aided Design (TCAD). Gallium Nitride (GaN) has the characteristics of high dielectric strength, high operating frequency, high current density, high switching speed and low-on resistance. Because of its wide band gap of 3.4 eV, it can be used mainly used for optoelectronic, high power and high frequency devices. The junction less structure is chosen to reduce the short channel effects. The DC characteristics analysis has done by varying parameters such as radius of nanowire/channel (15, 20, 25, 30 and 35 nm), oxide materials and gate thickness and gate length. The channel is n-type with doping it by silicon atoms at a concentration of 1×1018 cm−3. The threshold voltage is obtained for the selected gate materials (Au and Ag) range between 0.3 to 0.4 and the I on /I off ratio is found to be more than of 104.
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