TCAD Simulation Research of the Single Event Burnout and Hardening in Power LDMOS Transistors

Abstract

In this paper, the Single-event burnout (SEB) triggering mechanism for LDMOS devices is numerically studied by using the 2D technology computer-aided design device simulator, simultaneously, a hardened LDMOS with an N-type doped plug inserting in the drain region is proposed for the first time. The SEB triggering mechanisms contain the amplification bipolar effect and following impact ionization in the high field region. By comparing the simulation results from conventional LDMOS and proposed NDP LDMOS, the carriers induced by heavy ion can be quickly absorbed to drain and source electrode through NDP layer, so that the proposed NDP LDMOS can achieve better SEB performance than conventional one. With a heavy ion having the linear energy transfer value of 0.2pC/$\mu$m striking vertically, SEB threshold voltage obtained in conventional LDMOS and hardened NDP LDMOS is 197V and 291V, respectively.