TCAD simulation of the mixed irradiated n-MCz Si detector: Impact on space charges, electric field distribution

Abstract

In the mixed irradiations at HL-LHC, n- MCz Si as a detector material is reported as a prime applicant. To study the non-homogeneous distribution of space charges and electric field distribution in mixed irradiated p+n MCz silicon pad detectors, four-level numerical modeling of mixed irradiation induced deep traps using microscopic parameters obtained from experimental measurements were implemented in Synopsys T-CAD. These advanced damage model parameters were sufficiently tuned to reproduce the experimental data’s on the full depletion voltage and leakage current at 293K. In this paper, the influence of effective introduction rate of shallower donor deep trap E30 K has been determined using SRH theory calculations for experimental effective doping concentration f and the behavior of space charges and electric field distribution in the presence of deep traps are thoroughly investigated.