TCAD simulation of single event effects induced by pulsed laser

Abstract

In this paper, the laser radiation model is built up with TCAD (Technology Computer Aided Design) tool. And a PN junction is chosen for simulating the Single Event Effects (SEEs) induced by the pulsed laser as well as heavy ions. The transient current responses related with SEEs are simulated, and also the distributions of the electrostatic potential and carrier generation inside the device are plotted. Simulation results demonstrate that the pulsed laser can simulate single event effects effectively in spite of the different mechanisms responsible for generating electron-hole pairs between pulsed laser and heavy ions. And it is indicated that the pulsed laser simulation with TCAD is significant for the laser experiments.