Abstract
The complex physical phenomena related to surface radiation damage effects in solid-state silicon particle detectors can be competently addressed by means of Technology-CAD tools. For modeling purposes, surface damage effects can be mainly characterized by two parameters: the oxide charge density and the interface trap states density. Sensitivity analyses to these two main parameters have been performed, fostering the application of the numerical TCAD model as a tool to investigate the trapping/de-trapping mechanisms behind silicon radiation damaging, thus encouraging the experimental measurements understanding from a microscopic point of view. A physically-based technology-independent numerical modeling scheme for the surface radiation damage effects simulation has been developed, within the TCAD environment.
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