Abstract
The Technology Computer Aided Design (TCAD) package is employed to quantitatively model ion beam induced charge (IBIC) experiments. TCAD can be used even in cases where the interaction of the ion with the semiconductor significantly perturbs the electric field in the semiconductor (i.e. funneling) where conventional analytical models for calculating the IBIC signal are not applicable. In this paper we present the results of modeling of IBIC experiments of well-specified Schottky barrier devices fabricated on phosphorus doped silicon, with a resistivity of 10 Ω cm. The IBIC pulse height spectrum, obtained with a 2 MeV He microprobe, is compared with 2-D TCAD simulation models. This allows key device parameters to be measured by fitting the TCAD model to the IBIC data.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
