Abstract
AbstractWe demonstrated in this article a TCAD‐based (TCAD is defined as Technology Computer Aided Design) statistical modeling methodology for FinFET devices, which included TCAD Monte Carlo simulation, SPICE model library buildup, and model verification in circuit level. As a demonstrative example, a set of 14 nm FinFET devices are investigated for TCAD variability simulation and statistical model development. The stability and variability of different SRAM cells are further evaluated to verify the applicability of proposed statistical modeling methodology. The demonstrative statistical modeling method in this article is fully compatible with industrial standard methodology of CMOS device model, which can be easily immigrated into advanced technologies.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
