Abstract
In this paper 2D numerical simulation of n-ZnO/i-ZnO/p-Si p-i-n heterojunction solar cell using TCAD has been presented. In this work the design and performance optimization of p-i-n heterojunction solar cell using two-dimensional computer aided design (TCAD) tool has been presented. The device has been simulated and analyzed with respect to the I-V characteristics of the device in dark and illuminated condition. Further figure of merits like short circuit current (Isc), Open circuit Voltage (Voc), fill factor (FF), internal and external quantum efficiency (IQE &EQE), maximum power generated (Pmax) and conversion efficiency of the designed solar cell has been extracted. The I-V characteristics of the device and performance in terms of power conversion efficiency has been optimized for the proposed structure of solar cell with respect to doping concentration in n-ZnO and i-region thickness of the device. The simulation results indicate that the n-ZnO/i-ZnO/p-Si p-i-n heterojunction solar cell could be a good candidate for solar cells.
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