Abstract
This paper presents a parameterized current sensor able to detect transient ionization in the silicon substrate. Each sensor is controlled by a set of trimming bits that can be used to attune the sensitivity of the sensor while compensate process and temperature variations. Electrical simulation results show that the use of this parameterized sensor can increase the number of transistors monitored by a single sensor and at the same time maintain the efficiency in SET detection.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
